MatSE 584: Point and Line Defects in Materials

Online text (© Prof. Dr. Helmut Föll)
- webnotes: local and frameless matrix
- webnotes: original and frameless matrix
- PDF version
Textbook: Derek Hull and David J. Bacon, Introduction to Dislocations (4^th ed.)
Diffusion in Condensed Matter, Methods, Materials and Models (ed. Paul Heitjans and Jörg Kärger, 2005).
Transmission Electron Microscopy and Diffractometry of Materials, (3^rd ed.), Brent Fultz and James M. Howe (2008).
Crystal structures: NRL
J. Wilkins one-pagers on writing/speaking
Final project information

Date	Topic	Course materials/reading	Deadlines
M Jan. 14	Introduction and classification	1.3.1, 1.3.2, 1.3.3
W Jan. 16	Basic point defects	2.1.1, 2.1.2
M Jan. 21	== MLK, Jr. day ==
W Jan. 23	Basic point defects	2.1.3, 2.1.4 2.1.5 (summary)
F Jan. 25	Impurities; semiconductors	2.2.1, 2.2.2, 2.2.3 (summary) 2.3.1
M Jan. 28	Ionic crystals	2.4.1, 2.4.2, 2.4.3 HW1 soln -->
W Jan. 30	Reactions in ionic crystals	2.4.4
F Feb. 1	Measurement techniques	4.1.1, 4.2.1, 4.3.1
M Feb. 4	== canceled class ==
W Feb. 6	Diffusion	3.1.1, 3.2.1, 3.2.2	HW1 due
F Feb. 8	Diffusion	3.2.3, 3.3.1
M Feb. 11	Burgers circuit, dislocation geometry	5.1.1, 5.1.2, 5.2.4 HB: 1.4, 3.1-3.4, 3.9
W Feb. 13	Elasticity, strain fields	5.2.1, 5.2.2, 5.2.3, 5.2.5 HB: 4.1-4.8, 5.1-5.4, 6.1-6.3
F Feb. 15	FCC/HCP/BCC, reactions	5.4.1 5.4.2, 5.4.3 HB: 5.1-5.7, 6.1-6.3
M Feb. 18	Climb, kinks, jogs	5.3.1, 5.3.3 HB: 3.6-3.8, 7.1-7.8
W Feb. 20	Measurement techniques	6.1.1, 6.1.2 6.2.1 6.3.1, 6.3.2, 6.3.3, 6.3.4 HB: 2.1-2.7	HW2 due
M Feb. 25	Dislocation multiplication	5.3.2 HB: 8.1-8.8
W Feb. 27	Strength of solids	HB: 10.1-10.10	Outline due (F)
M Mar. 3	Dislocation arrays and boundaries	7.1.1, 7.1.2, 7.1.3 HB: 9.1-9.3
W Mar. 5	Dislocation arrays and boundaries	7.2.1, 7.2.2, 7.2.3, 7.2.4 HB: 9.4-9.8	HW3 due
M Mar. 10- F Mar. 28	== TMS/APS meeting, Spring break, MRS meeting ==
M Mar. 31	Ion implantation (Averback)	Peer review form Peer reviews assigned	Draft due
W Apr. 2	Computational techniques: Atomistics, DFT
M Apr. 7	Computational techniques: atomistics, phase-field, discrete dislocation dynamics		Peer reviews due
W Apr. 9	Grain boundary diffusion	Herzig and Mishin Reviews/comments returned
M Apr. 14	Diluted magnetic semiconductors
W Apr. 16	Size effects on strength
M Apr. 21	Defects in semiconductors
W Apr. 23	Oxides and minerals
M Apr. 28	Experimental characterization; Molecular dynamics
W Apr. 30	UO₂; Phase transformations	ICES	Final draft due

Links refer to specific chapters in webnotes; please be aware that links from within chapters are a part of reading as well.
"HB" refer to specific chapters in Hull and Bacon.

Scope

Point and line defects in crystalline materials: metals, semiconductors, insulators, and ionic materials. Quantification and measurement of defect properties: thermodynamic, structural, electronic, characterization. Defect interactions. Influence of defect properties on macroscale transport (including diffusion), mechanical, and electronic material properties. Characterization and control of defects.

Objectives

Students will be able to (a) quantify defect properties in a variety of materials; (b) connect defect properties to macroscale material properties; (c) quantify interactions between defects; (d) explain advantages and disadvantages of different defect characterization techniques; (e) apply techniques to control defects in materials. Students will also hone scientific writing and presentation skills, and learn to critically review manuscripts.